semihow rev.a0,july 2009 hfd6n40s / HFU6N40S bv dss = 400 v r ds(on) typ = 0.83 i d = 4.5 a ? originative new design ? superior avalanche rugged technology ? robust gate oxide technology ? very low intrinsic capacitances ? excellent switching characteristics ? unrivalled gate charge : 16 nc (typ.) ? extended safe operating area ? lower r ds(on) : 0.83 (typ.) @v gs =10v ? 100% avalanche tested thermal resistance characteristics features absolute maximum ratings t c =25 unless otherwise specified hfd6n40s / HFU6N40S 400v n - channel mosfet symbol parameter value units v dss drain - source voltage 400 v i d drain current ? continuous (t c = 25 ) 4.5 a drain current ? continuous (t c = 100 ) 2.7 a i dm drain current ? pulsed (note 1) 18 a v gs gate - source voltage 30 v e as single pulsed avalanche energy (note 2) 280 mj i ar avalanche current (note 1) 4.5 a e ar repetitive avalanche energy (note 1) 4.8 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t a = 25 ) 2.5 w power dissipation (t c = 25 ) - derate above 25 48 w 0.38 w/ t j , t stg operating and storage temperature range - 55 to +150 t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 symbol parameter typ. max. units r jc junction -to - case -- 2.6 /w r ja junction -to - ambient* -- 50 r ja junction -to - ambient -- 110 july 2009 d - pak 1.gate 2. drain 3. source i - pak hfd6n40s HFU6N40S * when mounted on the minimum pad size recommended (pcb mount) 2 1 2 3 1 3
semihow rev.a0,july 2009 hfd6n40s / HFU6N40S notes ; 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=13.7mh, i as =6.0a, v dd =50v, r g =25 ? , starting t j =25 c 3. i sd 4.5a, di/dt200a/s, v dd bv dss , starting t j =25 c 4. pulse test : pulse width 300s, duty cycle 2% 5. essentially independent of operating temperature electrical characteristics t c =25 c unless otherwise specified i s continuous source - drain diode forward current -- -- 4.5 a i sm pulsed source - drain diode forward current -- -- 18 v sd source - drain diode forward voltage i s = 4.5 a, v gs = 0 v -- -- 1.5 v trr reverse recovery time i s = 6.0 a, v gs = 0 v di f / dt = 100 a/ s (note 4) -- 230 -- ? qrr reverse recovery charge -- 1.7 -- c symbol parameter test conditions min typ max units v gs gate threshold voltage v ds = v gs , i d = 250 ? 2.0 -- 4.0 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 2.25 a -- 0.83 1.0 ? on characteristics bv dss drain - source breakdown voltage v gs = 0 v, i d = 250 ? 400 -- -- v bv dss / t j breakdown voltage temperature coefficient i d = 250 ? , referenced to25 -- 0.54 -- v/ i dss zero gate voltage drain current v ds = 400 v, v gs = 0 v -- -- 1 ? v ds = 320 v, t c = 125 -- -- 10 ? i gssf gate - body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 ? i gssr gate - body leakage current, reverse v gs = - 30 v, v ds = 0 v -- -- -100 ? off characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 480 625 ? c oss output capacitance -- 80 105 ? c rss reverse transfer capacitance -- 15 20 ? dynamic characteristics t d(on) turn - on time v ds = 200 v, i d = 6.0 a, r g = 25 ? (note 4,5) -- 13 35 ? t r turn - on rise time -- 65 140 ? t d(off) turn - off delay time -- 21 55 ? t f turn - off fall time -- 16 20 ? q g total gate charge v ds = 320 v, i d = 6.0 a, v gs = 10 v (note 4,5) -- 16 20 nc q gs gate - source charge -- 2.3 -- nc q gd gate - drain charge -- 8.2 -- nc switching characteristics source - drain diode maximum ratings and characteristics
semihow rev.a0,july 2009 hfd6n40s / HFU6N40S capacitance [pf] v ds , drain - source voltage [v] v gs , gate - source voltage [v] q g , total gate charge [nc] i d , drain current [a] v ds , drain - source voltage [v] i dr , reverse drain current [a] v sd , source - drain voltage [v] r ds(on) [ ?], drain - source on - resistance i d , drain current [a] i d , drain current [a] v gs , gate - source voltage [v] typical characteristics figure 1. on region characteristics figure 2. transfer characteristics figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics
semihow rev.a0,july 2009 hfd6n40s / HFU6N40S bv dss , (normalized) drain - source breakdown voltage t j , junction temperature [ o c] typical characteristics (continued) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z jc (t) = 2.6 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square wave pulse duration [sec] t 2 t 1 p dm figure 7. breakdown voltage variation vs temperature figure 8. on - resistance variation vs temperature figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ? note : 1. v gs = 10 v 2. i d = 2.25 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 100 ms 10 s dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 1 2 3 4 5 i d , drain current [a] t c , case temperature [ o c]
semihow rev.a0,july 2009 hfd6n40s / HFU6N40S fig 12. gate charge test circuit & waveform fig 13. resistive switching test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms e as = l l i as 2 ---- 2 1 -------------------- bv dss -- v dd bv dss v in v ds 10% 90% t d(on) t r t on t off t d(off) t f charge v gs 10v q g q gs q gd v dd v ds bv dss t p v dd i as v ds (t) i d (t) time v dd ( 0.5 rated v ds ) 10v v ds r l dut r g 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut 10v dut r g l i d
semihow rev.a0,july 2009 hfd6n40s / HFU6N40S fig 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ? i s controlled by pulse period v dd l i s 10v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period --------------------------
semihow rev.a0,july 2009 hfd6n40s / HFU6N40S package dimension 5.35 0.15 6.6 0.2 5.6 0.2 0.6 0.2 0.8 0.2 2.3typ 2.3typ 2.7 0.3 9.7 +0.5 -0.3 0.05 +0.1 -0.05 0.5 +0.1 -0.05 0.5 0.05 2.3 0.1 1.2 0.3 1.2 0.3 1 0.2 to - 252
semihow rev.a0,july 2009 hfd6n40s / HFU6N40S 5.35 0.15 6.6 0.2 0.75 0.15 2.3typ 2.3typ 5.6 0.2 7 0.2 7.5 0.3 0.6 0.1 2.3 0.1 0.5 0.05 1.2 0.3 0.5 +0.1 -0.05 0.8 0.15 to - 251
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